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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1378 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *Low Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 0.5A *Complement to Type 2SB1007 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @ Ta=25 w ww scs .i VALUE 80 V 80 V 5 V 0.7 A 1.2 W 10 UNIT .cn mi e PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1378 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 50A; IE= 0 80 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 B 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50A; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.4 V A ICBO Collector Cutoff Current VCB= 50V; IE= 0 0.5 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance hFE Classifications P 82-180 Q 120-270 w w R 180-390 scs .i w IC= 0.1A; VCE= 3V IE= 50mA; VCE= 10V IE= 0; VCB= 10V, ftest= 1MHz .cn mi e 82 0.5 A 390 120 MHz 10 pF isc Websitewww.iscsemi.cn 2 |
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